单个二极管
| 图片 | 制造商料号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
LSIC2SD065D16ADIODE SIL CARBIDE 650V 38A TO263 |
819 |
|
|
GEN2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 38A | 1.8 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 730pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
|
PAD20 TO-72 3LDIODE GEN PURP 45V 50MA TO72-3 |
484 |
|
|
PAD | TO-72-3 Metal Can | Bulk | Active | Standard | 45 V | 50mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 20 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Through Hole | TO-72-3 | -55°C ~ 150°C |
|
SCS212AGHRCDIODE SIL CARB 650V 12A TO220AC |
1,778 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.55 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 240 µA @ 600 V | 438pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | 175°C (Max) |
|
LSIC2SD065E12CCADIODE SIC 650V 18.5A TO247AD |
500 |
|
|
GEN2 | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 18.5A | 1.8 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 300pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-247AD | -55°C ~ 175°C |
|
PAD10 TO-72 3LDIODE GEN PURP 45V 50MA TO72-3 |
495 |
|
|
PAD | TO-72-3 Metal Can | Bulk | Active | Standard | 45 V | 50mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 10 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Through Hole | TO-72-3 | -55°C ~ 150°C |
|
PAD2 TO-72 3LDIODE GEN PURP 45V 50MA TO72-3 |
497 |
|
|
PAD | TO-72-3 Metal Can | Bulk | Active | Standard | 45 V | 50mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 2 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Through Hole | TO-72-3 | -55°C ~ 150°C |
|
CDBDSC51200-GDIODE SIL CARBIDE 1.2KV 18A DPAK |
411 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 18A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 475pF @ 0V, 1MHz | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
|
IDH10S120AKSA1DIODE SIL CARB 1.2KV 10A TO220-2 |
9,194 |
|
|
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 240 µA @ 1200 V | 500pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
RHRU150100DIODE GEN PURP 1KV 150A SOT93 |
265 |
|
|
- | TO-218-3 | Bulk | Active | Standard | 1000 V | 150A | 3 V @ 150 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 500 µA @ 1000 V | - | - | - | Through Hole | SOT-93 | -65°C ~ 175°C |
|
FFSH10120ADIODE SIL CARB 1.2KV 17A TO247-2 |
277 |
|
|
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 17A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 612pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
FFSH2065ADIODE SIL CARB 650V 25A TO247-2 |
260 |
|
|
- | TO-247-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 25A | - | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 1085pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
S4D30120G0DIODE SCHOTTKY SILICON CARBIDE S |
685 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263-2 | - |
|
PCDP10120G1_T0_00001TO-220AC, SIC |
1,984 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 529pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
|
JANTX1N6638DIODE GEN PURP 125V 300MA |
324 |
|
|
- | SQ-MELF, D | Bulk | Discontinued at Digi-Key | Standard | 125 V | 300mA | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4.5 ns | 100 µA @ 125 V | - | Military | MIL-PRF-19500/578 & /609 | Surface Mount | D-5D | -65°C ~ 175°C |
|
E6D20065GDIODE SIC 650V 68A TO263 |
969 |
|
|
E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Last Time Buy | SiC (Silicon Carbide) Schottky | 650 V | 68A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 75 µA @ 650 V | 1277pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
|
RURU10060DIODE GEN PURP 600V 100A TO218 |
305 |
|
|
- | TO-218-1 | Bulk | Active | Standard | 600 V | 100A | 1.6 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 250 µA @ 600 V | - | - | - | Through Hole | TO-218 | -65°C ~ 175°C |
|
PCDB10120G1_R2_000011200V SIC SCHOTTKY BARRIER DIODE |
2,350 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 529pF @ 1V, 1MHz | - | - | Surface Mount | TO-263 | -55°C ~ 175°C |
|
PCDD10120G1_L2_000011200V SIC SCHOTTKY BARRIER DIODE |
2,768 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 529pF @ 1V, 1MHz | - | - | Surface Mount | TO-252AA | -55°C ~ 175°C |
|
JANTXV1N6642USDIODE GEN PURP 100V 300MA D-5B |
108 |
|
|
- | SQ-MELF, E | Bulk | Active | Standard | 100 V | 300mA | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 500 nA @ 100 V | - | Military | MIL-PRF-19500/578 | Surface Mount | D-5B | -65°C ~ 175°C |
|
IDW30G65C5FKSA1DIODE SIL CARB 650V 30A TO247-3 |
7,764 |
|
|
CoolSiC™+ | TO-247-3 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 1.1 mA @ 650 V | 860pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3-1 | -55°C ~ 175°C |
分类概览
单个二极管 产品与选型指南
单个二极管 广泛应用于工业控制、汽车电子、通信设备、消费电子、新能源及其他电子系统。我们提供多品牌、多封装及不同规格的相关产品,方便工程师、采购人员和研发团队进行型号筛选、参数比较和采购询价。
您可以根据制造商、关键参数、库存情况及 Datasheet 信息筛选适合的 单个二极管。如暂时没有找到完全匹配的型号,也可以提交询价,我们将协助确认库存、交期以及可替代型号。
FAQ
如何选择合适的 单个二极管?
建议先确认电气参数、封装、工作温度、应用环境以及品牌要求,再结合库存和交期进行筛选。
页面上的库存信息是否可以直接采购?
库存会随供应情况变化。对于项目采购或批量需求,建议提交询价,以便进一步确认实时库存、价格和交期。
找不到指定型号怎么办?
您可以提交型号和数量需求,我们可以协助查询缺货型号,并根据参数提供可替代型号建议。
是否可以提供 Datasheet 和技术资料?
可以。产品列表中的 Datasheet 链接可用于查看相关技术资料;如资料暂缺,也可以联系我们协助查找。
