单个二极管
| 图片 | 制造商料号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RFUH20TJ6SFHGC9SUPER FAST RECOVERY DIODE : RFUH |
1,000 |
|
|
- | TO-220-2 Full Pack | Tube | Active | Standard | 600 V | 20A | 2.8 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 220 ns | 10 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-220ACFP | 150°C |
|
TRS12V65H,LQG3 SIC-SBD 650V 12A DFN8X8 |
4,472 |
|
|
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.35 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 778pF @ 1V, 1MHz | - | - | Surface Mount | 4-DFN-EP (8x8) | 175°C |
|
SDS120J005C3-ISATHDIODE 1200V-5A TO220-2L |
200 |
|
|
Sanan TO220 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 22A | 1.5 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 400pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
VS-3C10EV07T-M3/ISIC-G3-SLIMDPAK 2L |
4,391 |
|
|
eSMP® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 55 µA @ 650 V | 445pF @ 1V, 1MHz | - | - | Surface Mount | SlimDPAK | -55°C ~ 175°C |
|
S6D20065ADIODE SCHOTTKY SILICON CARBIDE S |
250 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 61A | 1.6 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 1650pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
S3D15065IDIODE SCHOTTKY SILICON CARBIDE S |
990 |
|
|
- | TO-220-2 Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 42A | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 650 V | 1243pF @ 0V, 1MHz | - | - | Through Hole | TO-220-Isolation | -55°C ~ 175°C |
|
SDS065J010D3-ISARHDIODE 650V-10A TO252-2L |
300 |
|
|
Sanan TO263 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 29A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 556pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2L | -55°C ~ 175°C |
|
S3D15065HDIODE SCHOTTKY SILICON CARBIDE S |
300 |
|
|
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 42A | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 650 V | 1243pF @ 0V, 1MHz | - | - | Through Hole | TO-247AC | -55°C ~ 175°C |
|
TRS12E65H,S1QG3 SIC-SBD 650V 12A TO-220-2L |
370 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.35 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 778pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C |
|
BSDD10G65E2DIODE SCHOT SIC 650V 10A TO252 |
9,660 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 323pF @ 1V, 1MHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
IDWD50E120D7XKSA1DIODE GEN PURP 1200V 81A TO247-2 |
230 |
|
|
- | TO-247-2 | Tube | Active | Standard | 1200 V | 81A | 3 V @ 50 A | Fast Recovery =< 500ns, > 5A (Io) | 160 ns | 20 µA @ 1200 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
|
SDS065J010C3-ISATHDIODE 650V-10A TO220-2L |
290 |
|
|
Sanan TO220 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 556pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
SDS120J010C3-ISATHDIODE 1200V-10A TO220-2L |
200 |
|
|
Sanan TO220 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 37A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | 780pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
FFSB0665ADIODE SIL CARB 650V 9A D2PAK-3 |
800 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 9A | 1.75 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 361pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
|
FFSP2065BDIODE SIL CARB 650V 22.5A TO220 |
397 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 22.5A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 866pF @ 1V, 100kHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
SDS065J010E3-ISARHDIODE 650V-10A TO263-2L |
300 |
|
|
Sanan TO263 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 556pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2L | -55°C ~ 175°C |
|
BSDH10G120E2DIODE SIC 1200V 10A TO220-2 |
2,929 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.6 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 1200 V | 481pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
PCDP0465GB_T0_00601650V SIC SCHOTTKY BARRIER DIODE |
1,931 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.6 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
IDK08G65C5XTMA2DIODE SIL CARB 650V 8A TO263-2 |
959 |
|
|
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | - | 250pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
|
FFSD1065B-F085DIODE SIL CARB 650V 13.5A DPAK |
1,968 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 13.5A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 424pF @ 1V, 100kHz | Automotive | AEC-Q101 | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
分类概览
单个二极管 产品与选型指南
单个二极管 广泛应用于工业控制、汽车电子、通信设备、消费电子、新能源及其他电子系统。我们提供多品牌、多封装及不同规格的相关产品,方便工程师、采购人员和研发团队进行型号筛选、参数比较和采购询价。
您可以根据制造商、关键参数、库存情况及 Datasheet 信息筛选适合的 单个二极管。如暂时没有找到完全匹配的型号,也可以提交询价,我们将协助确认库存、交期以及可替代型号。
FAQ
如何选择合适的 单个二极管?
建议先确认电气参数、封装、工作温度、应用环境以及品牌要求,再结合库存和交期进行筛选。
页面上的库存信息是否可以直接采购?
库存会随供应情况变化。对于项目采购或批量需求,建议提交询价,以便进一步确认实时库存、价格和交期。
找不到指定型号怎么办?
您可以提交型号和数量需求,我们可以协助查询缺货型号,并根据参数提供可替代型号建议。
是否可以提供 Datasheet 和技术资料?
可以。产品列表中的 Datasheet 链接可用于查看相关技术资料;如资料暂缺,也可以联系我们协助查找。
