单个二极管
| 图片 | 制造商料号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
WNSC2D101200WQDIODE SIL CARB 1.2KV 10A TO247-2 |
2,317 |
|
|
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.65 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 1200 V | 490pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | 175°C |
|
CDBDSC8650-GDIODE SIL CARB 650V 25.5A DPAK |
342 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 25.5A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 550pF @ 0V, 1MHz | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
|
PCDP1665G1_T0_00001TO-220AC, SIC |
2,000 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 618pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
STPSC10C065RYDIODE SIL CARBIDE 650V 10A I2PAK |
972 |
|
|
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | - | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 480pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | I2PAK | -40°C ~ 175°C |
|
JPAD10 TO-92 2LDIODE GEN PURP 35V 10MA TO92 |
2,597 |
|
|
PAD | TO-226-2, TO-92-2 (TO-226AC) | Bulk | Active | Standard | 35 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 10 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Through Hole | TO-92 | -55°C ~ 150°C |
|
NXPSC08650D6JDIODE SIL CARBIDE 650V 8A DPAK |
7,184 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 230 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | 175°C (Max) |
|
NXPSC086506QDIODE SIL CARB 650V 8A TO220AC |
3,000 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 230 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
NXPSC08650X6QDIODE SIL CARBIDE 650V 8A TO220F |
2,926 |
|
|
- | TO-220-2 Full Pack, Isolated Tab | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 230 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Through Hole | TO-220F | 175°C (Max) |
|
RHRG5060DIODE GEN PURP 600V 50A TO247-2 |
1,778 |
|
|
- | TO-247-2 | Tube | Active | Avalanche | 600 V | 50A | 2.1 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 250 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | -65°C ~ 175°C |
|
JPAD5 TO-92 2L ROHSDIODE GEN PURP 35V 10MA TO92 |
676 |
|
|
PAD | TO-226-2, TO-92-2 (TO-226AC) | Bulk | Active | Standard | 35 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 5 pA @ 20 V | 0.5pF @ 5V, 1MHz | - | - | Through Hole | TO-92 | -55°C ~ 150°C |
|
STPSC12C065DYDIODE SIL CARB 650V 12A TO220AC |
154 |
|
|
ECOPACK®2 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.75 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120 µA @ 650 V | 530pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | -40°C ~ 175°C |
|
FFSPF0865ADIODE SIC 650V 8A TO220F-2FS |
915 |
|
|
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.75 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 463pF @ 1V, 100kHz | - | - | Through Hole | TO-220F-2FS | -55°C ~ 175°C |
|
NXPSC08650B6JDIODE SIL CARBIDE 650V 8A D2PAK |
3,160 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 230 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C (Max) |
|
LSIC2SD065A06ADIODE SIL CARB 650V 18.5A TO220L |
758 |
|
|
Gen2 | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 18.5A | 1.8 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
VS-100BGQ015SCHOTTKY RECT 15V 100A POWLRTAB |
288 |
|
|
- | PowerTab™, PowIRtab™ | Bulk | Obsolete | Schottky | 15 V | 100A | 460 mV @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 18 mA @ 15 V | - | - | - | Chassis Mount | PowIRtab™ | - |
|
JPAD200 TO-92 2LDIODE GEN PURP 35V 10MA TO92 |
1,031 |
|
|
PAD | TO-226-2, TO-92-2 (TO-226AC) | Bulk | Active | Standard | 35 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Through Hole | TO-92 | -55°C ~ 150°C |
|
CDBJFSC8650-GDIODE SIL CARBIDE 650V 8A TO220F |
479 |
|
|
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 560pF @ 0V, 1MHz | - | - | Through Hole | TO-220F | -55°C ~ 175°C |
|
IDDD12G65C6XTMA1DIODE SIL CARB 650V 34A HDSOP-10 |
2,234 |
|
|
CoolSiC™+ | 10-PowerSOP Module | Tape & Reel (TR) | Last Time Buy | SiC (Silicon Carbide) Schottky | 650 V | 34A | - | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 420 V | 594pF @ 1V, 1MHz | - | - | Surface Mount | PG-HDSOP-10-1 | -55°C ~ 175°C |
|
UJ3D06520KSDDIODE SIL CARB 650V 10A TO247-3 |
9,218 |
|
|
Gen-III | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 654pF @ 1V, 1MHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
|
STTH30S06WDIODE GEN PURP 600V 30A DO247-2 |
521 |
|
|
- | DO-247-2 (Straight Leads) | Tube | Obsolete | Standard | 600 V | 30A | 3.6 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 50 µA @ 600 V | - | - | - | Through Hole | - | -40°C ~ 175°C |
分类概览
单个二极管 产品与选型指南
单个二极管 广泛应用于工业控制、汽车电子、通信设备、消费电子、新能源及其他电子系统。我们提供多品牌、多封装及不同规格的相关产品,方便工程师、采购人员和研发团队进行型号筛选、参数比较和采购询价。
您可以根据制造商、关键参数、库存情况及 Datasheet 信息筛选适合的 单个二极管。如暂时没有找到完全匹配的型号,也可以提交询价,我们将协助确认库存、交期以及可替代型号。
FAQ
如何选择合适的 单个二极管?
建议先确认电气参数、封装、工作温度、应用环境以及品牌要求,再结合库存和交期进行筛选。
页面上的库存信息是否可以直接采购?
库存会随供应情况变化。对于项目采购或批量需求,建议提交询价,以便进一步确认实时库存、价格和交期。
找不到指定型号怎么办?
您可以提交型号和数量需求,我们可以协助查询缺货型号,并根据参数提供可替代型号建议。
是否可以提供 Datasheet 和技术资料?
可以。产品列表中的 Datasheet 链接可用于查看相关技术资料;如资料暂缺,也可以联系我们协助查找。
