单个二极管
| 图片 | 制造商料号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-35EPF12LHM3DIODE GEN PURP 1.2KV 35A TO247AD |
169 |
|
|
- | TO-247-2 | Tube | Active | Standard | 1200 V | 35A | 1.47 V @ 35 A | Fast Recovery =< 500ns, > 200mA (Io) | 450 ns | 100 µA @ 1200 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD | -40°C ~ 150°C |
|
MSC010SDA120BDIODE SIL CARB 1.2KV 10A TO247 |
1,511 |
|
|
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Through Hole | TO-247 | - |
|
JAN1N5552DIODE GEN PURP 600V 3A AXIAL |
152 |
|
|
- | B, Axial | Bulk | Active | Standard | 600 V | 3A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 600 V | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
|
SCS210AGC17DIODE SIC 650V 10A TO220ACFP |
1,918 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.55 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 365pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
|
STTH3006PIDIODE GEN PURP 600V 30A DOP3I |
444 |
|
|
- | DOP3I-2 Insulated (Straight Leads) | Tube | Active | Standard | 600 V | 30A | 1.85 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 70 ns | 25 µA @ 600 V | - | - | - | Through Hole | DOP3I | 175°C (Max) |
|
VS-E5PH6012LHN3DIODE GEN PURP 1.2KV 60A TO247AD |
334 |
|
|
- | TO-247-2 | Tube | Active | Standard | 1200 V | 60A | 2.5 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 130 ns | 50 µA @ 1200 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD | -55°C ~ 175°C |
|
VS-E5PH6012L-N3DIODE GEN PURP 1.2KV 60A TO247AD |
113 |
|
|
FRED Pt® | TO-247-2 | Tube | Active | Standard | 1200 V | 60A | 2.3 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 130 ns | 50 µA @ 1200 V | - | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
S4D08120EDIODE SIL CARBIDE 1.2KV 8A DPAK |
2,606 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 8A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 1200 V | 560pF @ 0V, 1MHz | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
|
SCS206AGC17DIODE SIL CARB 650V 6A TO220ACFP |
638 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.55 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 600 V | 219pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
|
VS-E5PX6012L-N3DIODE GEN PURP 1.2KV 60A TO247AD |
165 |
|
|
FRED Pt® | TO-247-2 | Tube | Active | Standard | 1200 V | 60A | 3.15 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 120 ns | 50 µA @ 1200 V | - | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
1N5619DIODE GEN PURP 600V 1A AXIAL |
301 |
|
|
- | A, Axial | Bulk | Active | Standard | 600 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 500 nA @ 600 V | 25pF @ 12V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
VS-40EPS08-M3DIODE GP 800V 40A TO247AC |
678 |
|
|
- | TO-247-2 | Tube | Active | Standard | 800 V | 40A | 1 V @ 20 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 800 V | - | - | - | Through Hole | TO-247AC Modified | -40°C ~ 150°C |
|
VS-65PQ015-N3DIODE SCHOTTKY 15V 65A TO247AC |
103 |
|
|
- | TO-247-3 | Tube | Active | Schottky | 15 V | 65A | 500 mV @ 65 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 18 mA @ 15 V | - | - | - | Through Hole | TO-247AC | -55°C ~ 125°C |
|
VS-E5PH7512L-N3DIODE GEN PURP 1.2KV 75A TO247AD |
3,490 |
|
|
FRED Pt® Gen 5 | TO-247-2 | Tube | Active | Standard | 1200 V | 75A | 2.6 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 145 ns | 50 µA @ 1200 V | - | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
RRD20TJ10SGC9DIODE GEN PURP 1KV 20A TO220ACFP |
219 |
|
|
- | TO-220-2 Full Pack | Tube | Active | Standard | 1000 V | 20A | 1.05 V @ 20 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1000 V | - | - | - | Through Hole | TO-220ACFP | 150°C |
|
C3D06065EDIODE SIL CARB 650V 20A TO252-2 |
1,387 |
|
|
Z-Rec® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Not For New Designs | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 295pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
IDH08SG60CXKSA2DIODE SIL CARB 600V 8A TO220-2-1 |
1,662 |
|
|
CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 600 V | 8A | 2.1 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 600 V | 240pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
VS-30EPF12-M3DIODE GP 1.2KV 30A TO247AC |
443 |
|
|
- | TO-247-2 | Tube | Active | Standard | 1200 V | 30A | 1.41 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1200 V | - | - | - | Through Hole | TO-247AC Modified | -40°C ~ 150°C |
|
VS-30EPF06-M3DIODE GP 600V 30A TO247AC |
500 |
|
|
- | TO-247-2 | Tube | Active | Standard | 600 V | 30A | 1.41 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 600 V | - | - | - | Through Hole | TO-247AC Modified | -40°C ~ 150°C |
|
C6D10065G-TRDIODE SIL CARB 650V 36A TO263-2 |
1,525 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 36A | 1.4 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 611pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
分类概览
单个二极管 产品与选型指南
单个二极管 广泛应用于工业控制、汽车电子、通信设备、消费电子、新能源及其他电子系统。我们提供多品牌、多封装及不同规格的相关产品,方便工程师、采购人员和研发团队进行型号筛选、参数比较和采购询价。
您可以根据制造商、关键参数、库存情况及 Datasheet 信息筛选适合的 单个二极管。如暂时没有找到完全匹配的型号,也可以提交询价,我们将协助确认库存、交期以及可替代型号。
FAQ
如何选择合适的 单个二极管?
建议先确认电气参数、封装、工作温度、应用环境以及品牌要求,再结合库存和交期进行筛选。
页面上的库存信息是否可以直接采购?
库存会随供应情况变化。对于项目采购或批量需求,建议提交询价,以便进一步确认实时库存、价格和交期。
找不到指定型号怎么办?
您可以提交型号和数量需求,我们可以协助查询缺货型号,并根据参数提供可替代型号建议。
是否可以提供 Datasheet 和技术资料?
可以。产品列表中的 Datasheet 链接可用于查看相关技术资料;如资料暂缺,也可以联系我们协助查找。
