单个二极管
| 图片 | 制造商料号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-3C10CP12L-M310A 1200V SIC ZERO QRR DUAL TJMA |
500 |
|
|
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.5 V @ 5 A | No Recovery Time > 500mA (Io) | - | 30 µA @ 1200 V | 20pF @ 800V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
SCS205KNHRTRL1200V 5A SMD SILICON CARBIDE |
200 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.6 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 260pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-263L | 175°C |
|
BSDV10G120E2DIOD SCHOT SIC 1200V 10A TO247-2 |
2,994 |
|
|
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 481pF @ 1V, 1MHz | - | - | Through Hole | TO-247 | -55°C ~ 175°C |
|
SCS310AGC16DIODE SIL CARB 650V 10A TO220ACP |
1,000 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 500pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
|
PCDG10120GB_L2_00601SIC DIODE 1200V/10A IN TO-252AA |
6,000 |
|
|
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SDS065J016H3-ISATHDIODE 650V-16A TO247-2L |
200 |
|
|
Sanan TO247 | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 44A | 1.5 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 48 µA @ 650 V | 837pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2L | -55°C ~ 175°C |
|
IDWD120E120D7XKSA1DIODE GEN PURP 1200V 177A TO247 |
129 |
|
|
- | TO-247-2 | Tube | Active | Standard | 1200 V | 177A | 3 V @ 120 A | Fast Recovery =< 500ns, > 5A (Io) | 215 ns | 20 µA @ 1200 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
|
SIT20C065DIODE SIL CARB 650V 20A TO220AC |
970 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.8 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 650 V | - | - | - | Through Hole | TO-220AC | -50°C ~ 175°C |
|
SDS120J010E3-ISARHDIODE 1200V-10A TO263-2L |
200 |
|
|
Sanan TO263 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 37A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | 780pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2L | -55°C ~ 175°C |
|
VS-90EPF12L-M3DIODE GEN PURP 1.2KV 90A TO247AD |
466 |
|
|
- | TO-247-2 | Tube | Active | Standard | 1200 V | 90A | 1.38 V @ 90 A | Fast Recovery =< 500ns, > 200mA (Io) | 480 ns | 100 µA @ 1200 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
|
PCDF0865G1_T0_00601650V/8A THROUGH HOLE SILICON CAR |
2,000 |
|
|
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
|
FFSH3065BDIODE SIL CARB 650V 37A TO247-2 |
326 |
|
|
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 37A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 1260pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
SDS065J020D3-ISARHDIODE 650V-20A TO252-2L |
200 |
|
|
Sanan TO252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 51A | 1.5 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 1018pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2L | -55°C ~ 175°C |
|
PCDP0865GB_T0_00601650V SIC SCHOTTKY BARRIER DIODE |
2,000 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.6 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 372pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
PCDP1065GC_T0_00601650V SIC SCHOTTKY BARRIER DIODE |
1,961 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.8 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 271pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
PSC1665JJSIC DIODES AND FETS |
800 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), Variant | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.8 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 650 V | 475pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK R2P | -55°C ~ 175°C |
|
PCDD1065GB_L2_00601650V/10A IN TO-252AA PACKAGE SIL |
3,000 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 610pF @ 1V, 1MHz | - | - | Surface Mount | TO-252AA | -55°C ~ 175°C |
|
VS-30EPF10-M3DIODE GP 1KV 30A TO247AC |
326 |
|
|
- | TO-247-2 | Tube | Active | Standard | 1000 V | 30A | 1.41 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 450 ns | 100 µA @ 1000 V | - | - | - | Through Hole | TO-247AC Modified | -40°C ~ 150°C |
|
JAN1N5809DIODE GEN PURP 100V 6A AXIAL |
117 |
|
|
- | B, Axial | Bulk | Active | Standard | 100 V | 6A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
|
FFSP15120ADIODE SIL CARB 1.2KV 15A TO220L |
574 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.75 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 1200 V | 936pF @ 1V, 100kHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
分类概览
单个二极管 产品与选型指南
单个二极管 广泛应用于工业控制、汽车电子、通信设备、消费电子、新能源及其他电子系统。我们提供多品牌、多封装及不同规格的相关产品,方便工程师、采购人员和研发团队进行型号筛选、参数比较和采购询价。
您可以根据制造商、关键参数、库存情况及 Datasheet 信息筛选适合的 单个二极管。如暂时没有找到完全匹配的型号,也可以提交询价,我们将协助确认库存、交期以及可替代型号。
FAQ
如何选择合适的 单个二极管?
建议先确认电气参数、封装、工作温度、应用环境以及品牌要求,再结合库存和交期进行筛选。
页面上的库存信息是否可以直接采购?
库存会随供应情况变化。对于项目采购或批量需求,建议提交询价,以便进一步确认实时库存、价格和交期。
找不到指定型号怎么办?
您可以提交型号和数量需求,我们可以协助查询缺货型号,并根据参数提供可替代型号建议。
是否可以提供 Datasheet 和技术资料?
可以。产品列表中的 Datasheet 链接可用于查看相关技术资料;如资料暂缺,也可以联系我们协助查找。
