单个二极管
| 图片 | 制造商料号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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WNSC2D10650TJDIODE SIL CARBIDE 650V 10A 5DFN |
890 |
|
|
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 310pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | 175°C |
|
WNSC2D10650WQDIODE SIL CARB 650V 10A TO247-2 |
517 |
|
|
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 310pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | 175°C |
|
STTH806DDIODE GEN PURP 600V 8A TO220AC |
3,924 |
|
|
- | TO-220-2 | Tube | Obsolete | Standard | 600 V | 8A | 1.85 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 8 µA @ 600 V | - | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
IDK12G65C5XTMA1DIODE SIL CARB 650V 12A TO263-2 |
9,817 |
|
|
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.8 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 2.1 mA @ 650 V | 360pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
|
|
VS-10ETF10-M3DIODE GEN PURP 1KV 10A TO220AC |
4,509 |
|
|
- | TO-220-2 | Tube | Active | Standard | 1000 V | 10A | 1.33 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 310 ns | 100 µA @ 1000 V | - | - | - | Through Hole | TO-220AC | -40°C ~ 150°C |
|
RURU5050DIODE AVALANCHE 500V 50A TO218 |
580 |
|
|
- | TO-218-1 | Bulk | Active | Avalanche | 500 V | 50A | 1.6 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 500 µA @ 500 V | - | - | - | Chassis Mount | TO-218 | -65°C ~ 175°C |
|
PCDB0465G1_R2_00001650V SIC SCHOTTKY BARRIER DIODE |
2,400 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 146pF @ 1V, 1MHz | - | - | Surface Mount | TO-263 | -55°C ~ 175°C |
|
NRVB120ESFT1GDIODE SCHOTTKY 20V 1A SOD123FL |
7,643 |
|
|
- | SOD-123F | Tape & Reel (TR) | Obsolete | Schottky | 20 V | 1A | 530 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 20 V | - | - | - | Surface Mount | SOD-123FL | -65°C ~ 150°C |
|
S6D10065L650V, 10A, DFN88, SIC SCHOTTKY D |
833 |
|
|
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RHRU50100DIODE AVALANCHE 1KV 50A TO218 |
280 |
|
|
- | TO-218-1 | Bulk | Active | Avalanche | 1000 V | 50A | 3 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 95 ns | 500 µA @ 1000 V | - | - | - | Chassis Mount | TO-218 | -65°C ~ 175°C |
|
SICR10650CTDIODE SIL CARB 650V 5A TO220AB |
225 |
|
|
- | TO-220-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 5A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | - | - | - | Through Hole | TO-220AB | -55°C ~ 175°C |
|
|
SICRF5650DIODE SIL CARB 650V 5A ITO220AC |
224 |
|
|
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 5A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | - | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
|
SICR5650DIODE SIL CARB 650V 5A TO220AC |
158 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 5A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | - | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
MUR6060BS-BPDIODE GEN PURP 600V 60A TO247AD |
1,680 |
|
|
- | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 2.5 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 600 V | 200pF @ 4V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
BYC75W-600PT2QDIODE GEN PURP 600V 75A TO247-2 |
508 |
|
|
- | TO-247-2 | Tube | Active | Standard | 600 V | 75A | 2.75 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | 175°C |
|
WNSC6D16650CW6QDIODE SIL CARB 650V 16A TO247-3 |
3,000 |
|
|
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.45 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 780pF @ 1V, 1MHz | - | - | Through Hole | TO-247-3 | 175°C |
|
MUR6060BH-BPDIODE GEN PURP 600V 60A TO247AD |
1,798 |
|
|
- | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 2.4 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 70 ns | 10 µA @ 600 V | 400pF @ 4V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
NRVBB4030T4GDIODE SCHOTTKY 30V 40A D2PAK |
6,765 |
|
|
SWITCHMODE™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | Schottky | 30 V | 40A | 550 mV @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350 µA @ 30 V | - | - | - | Surface Mount | D2PAK | -65°C ~ 175°C |
|
PCDP0465G1_T0_00001TO-220AC, SIC |
1,996 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 146pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
FFSD0465ADIODE SIL CARB 650V 7.6A DPAK |
2,442 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 7.6A | 1.75 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 258pF @ 1V, 100kHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
分类概览
单个二极管 产品与选型指南
单个二极管 广泛应用于工业控制、汽车电子、通信设备、消费电子、新能源及其他电子系统。我们提供多品牌、多封装及不同规格的相关产品,方便工程师、采购人员和研发团队进行型号筛选、参数比较和采购询价。
您可以根据制造商、关键参数、库存情况及 Datasheet 信息筛选适合的 单个二极管。如暂时没有找到完全匹配的型号,也可以提交询价,我们将协助确认库存、交期以及可替代型号。
FAQ
如何选择合适的 单个二极管?
建议先确认电气参数、封装、工作温度、应用环境以及品牌要求,再结合库存和交期进行筛选。
页面上的库存信息是否可以直接采购?
库存会随供应情况变化。对于项目采购或批量需求,建议提交询价,以便进一步确认实时库存、价格和交期。
找不到指定型号怎么办?
您可以提交型号和数量需求,我们可以协助查询缺货型号,并根据参数提供可替代型号建议。
是否可以提供 Datasheet 和技术资料?
可以。产品列表中的 Datasheet 链接可用于查看相关技术资料;如资料暂缺,也可以联系我们协助查找。
