存储器

制造商 系列 封装/外壳 包装 产品状态 可编程 存储类型 存储格式 技术 存储容量 存储组织 存储接口 时钟频率 写周期时间 - 字,页 访问时间 电压 - 电源 工作温度 等级 认证 安装类型 供应商设备封装

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图片 制造商料号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 可编程 存储类型 存储格式 技术 存储容量 存储组织 存储接口 时钟频率 写周期时间 - 字,页 访问时间 电压 - 电源 工作温度 等级 认证 安装类型 供应商设备封装
IS46DR81280B-25DBLA2-TR

IS46DR81280B-25DBLA2-TR

IC DRAM 1GBIT PARALLEL 60TWBGA

ISSI, Integrated Silicon Solution Inc

0
IS46DR81280B-25DBLA2-TR数据手册 - 60-TFBGA Tape & Reel (TR) Active Not Verified Volatile DRAM SDRAM - DDR2 1Gbit 128M x 8 Parallel 400 MHz 15ns 400 ps 1.7V ~ 1.9V -40°C ~ 105°C (TA) - - Surface Mount 60-TWBGA (8x10.5)
IS46DR81280B-3DBLA2-TR

IS46DR81280B-3DBLA2-TR

IC DRAM 1GBIT PARALLEL 60TWBGA

ISSI, Integrated Silicon Solution Inc

0
IS46DR81280B-3DBLA2-TR数据手册 - 60-TFBGA Tape & Reel (TR) Active Not Verified Volatile DRAM SDRAM - DDR2 1Gbit 128M x 8 Parallel 333 MHz 15ns 450 ps 1.7V ~ 1.9V -40°C ~ 105°C (TA) - - Surface Mount 60-TWBGA (8x10.5)
IS61LPS102418A-250B3I-TR

IS61LPS102418A-250B3I-TR

IC SRAM 18MBIT PARALLEL 165TFBGA

ISSI, Integrated Silicon Solution Inc

0
IS61LPS102418A-250B3I-TR数据手册 - 165-TBGA Tape & Reel (TR) Active Not Verified Volatile SRAM SRAM - Synchronous, SDR 18Mbit 1M x 18 Parallel 250 MHz - 2.6 ns 3.135V ~ 3.465V -40°C ~ 85°C (TA) - - Surface Mount 165-TFBGA (13x15)
IS61NLF51236-6.5B3I-TR

IS61NLF51236-6.5B3I-TR

IC SRAM 18MBIT PARALLEL 165TFBGA

ISSI, Integrated Silicon Solution Inc

0
IS61NLF51236-6.5B3I-TR数据手册 - 165-TBGA Tape & Reel (TR) Obsolete Not Verified Volatile SRAM SRAM - Synchronous, SDR 18Mbit 512K x 36 Parallel 133 MHz - 6.5 ns 3.135V ~ 3.465V -40°C ~ 85°C (TA) - - Surface Mount 165-TFBGA (13x15)
IS61NLF51236-6.5B3-TR

IS61NLF51236-6.5B3-TR

IC SRAM 18MBIT PARALLEL 165TFBGA

ISSI, Integrated Silicon Solution Inc

0
IS61NLF51236-6.5B3-TR数据手册 - 165-TBGA Tape & Reel (TR) Obsolete Not Verified Volatile SRAM SRAM - Synchronous, SDR 18Mbit 512K x 36 Parallel 133 MHz - 6.5 ns 3.135V ~ 3.465V 0°C ~ 70°C (TA) - - Surface Mount 165-TFBGA (13x15)
IS25WP016-JKLE

IS25WP016-JKLE

IC FLASH 16MBIT SERIAL 8WSON

ISSI, Integrated Silicon Solution Inc

0
IS25WP016-JKLE数据手册 - 8-WDFN Exposed Pad Tray Active Not Verified Non-Volatile FLASH FLASH - NOR 16Mbit 2M x 8 Serial 133 MHz 800µs 7 ns 1.65V ~ 1.95V -40°C ~ 105°C (TA) - - Surface Mount 8-WSON (6x5)
IS25WP016-JLLE

IS25WP016-JLLE

IC FLASH 16MBIT SERIAL 8WSON

ISSI, Integrated Silicon Solution Inc

0
IS25WP016-JLLE数据手册 - 8-WDFN Exposed Pad Tray Active Not Verified Non-Volatile FLASH FLASH - NOR 16Mbit 2M x 8 Serial 133 MHz 800µs 7 ns 1.65V ~ 1.95V -40°C ~ 105°C (TA) - - Surface Mount 8-WSON (8x6)
IS41C16100C-50TI

IS41C16100C-50TI

IC DRAM 16MBIT PAR 50TSOP II

ISSI, Integrated Silicon Solution Inc

0
IS41C16100C-50TI数据手册 - 50-TSOP (0.400", 10.16mm Width), 44 Leads Tray Obsolete Not Verified Volatile DRAM DRAM - EDO 16Mbit 1M x 16 Parallel - 85ns 25 ns 4.5V ~ 5.5V -40°C ~ 85°C (TA) - - Surface Mount 50-TSOP II
IS41C16105C-50TI

IS41C16105C-50TI

IC DRAM 16MBIT PAR 50TSOP II

ISSI, Integrated Silicon Solution Inc

0
IS41C16105C-50TI数据手册 - 50-TSOP (0.400", 10.16mm Width), 44 Leads Tray Obsolete Not Verified Volatile DRAM DRAM - FP 16Mbit 1M x 16 Parallel - 84ns 25 ns 4.5V ~ 5.5V -40°C ~ 85°C (TA) - - Surface Mount 50-TSOP II
IS41LV16100C-50TI

IS41LV16100C-50TI

IC DRAM 16MBIT PAR 50TSOP II

ISSI, Integrated Silicon Solution Inc

0
IS41LV16100C-50TI数据手册 - 50-TSOP (0.400", 10.16mm Width), 44 Leads Tray Obsolete Not Verified Volatile DRAM DRAM - EDO 16Mbit 1M x 16 Parallel - 85ns 25 ns 2.97V ~ 3.63V -40°C ~ 85°C (TA) - - Surface Mount 50-TSOP II
IS42S16160G-7BI

IS42S16160G-7BI

IC DRAM 256MBIT PAR 54TFBGA

ISSI, Integrated Silicon Solution Inc

0
IS42S16160G-7BI数据手册 - 54-TFBGA Tray Obsolete Not Verified Volatile DRAM SDRAM 256Mbit 16M x 16 Parallel 143 MHz - 5.4 ns 3V ~ 3.6V -40°C ~ 85°C (TA) - - Surface Mount 54-TFBGA (8x8)
IS42S16800F-6B

IS42S16800F-6B

IC DRAM 128MBIT PAR 54TFBGA

ISSI, Integrated Silicon Solution Inc

0
IS42S16800F-6B数据手册 - 54-TFBGA Tray Obsolete Not Verified Volatile DRAM SDRAM 128Mbit 8M x 16 Parallel 166 MHz - 5.4 ns 3V ~ 3.6V 0°C ~ 70°C (TA) - - Surface Mount 54-TFBGA (8x8)
IS42S16800F-7BI

IS42S16800F-7BI

IC DRAM 128MBIT PAR 54TFBGA

ISSI, Integrated Silicon Solution Inc

0
IS42S16800F-7BI数据手册 - 54-TFBGA Tray Obsolete Not Verified Volatile DRAM SDRAM 128Mbit 8M x 16 Parallel 143 MHz - 5.4 ns 3V ~ 3.6V -40°C ~ 85°C (TA) - - Surface Mount 54-TFBGA (8x8)
IS42S32400F-6B

IS42S32400F-6B

IC DRAM 128MBIT PAR 90TFBGA

ISSI, Integrated Silicon Solution Inc

0
IS42S32400F-6B数据手册 - 90-TFBGA Tray Obsolete Not Verified Volatile DRAM SDRAM 128Mbit 4M x 32 Parallel 166 MHz - - 3V ~ 3.6V 0°C ~ 70°C (TA) - - Surface Mount 90-TFBGA (8x13)
IS42S32400F-6BI

IS42S32400F-6BI

IC DRAM 128MBIT PAR 90TFBGA

ISSI, Integrated Silicon Solution Inc

0
IS42S32400F-6BI数据手册 - 90-TFBGA Tray Obsolete Not Verified Volatile DRAM SDRAM 128Mbit 4M x 32 Parallel 166 MHz - - 3V ~ 3.6V -40°C ~ 85°C (TA) - - Surface Mount 90-TFBGA (8x13)
IS42S32400F-7B

IS42S32400F-7B

IC DRAM 128MBIT PAR 90TFBGA

ISSI, Integrated Silicon Solution Inc

0
IS42S32400F-7B数据手册 - 90-TFBGA Tray Obsolete Not Verified Volatile DRAM SDRAM 128Mbit 4M x 32 Parallel 143 MHz - - 3V ~ 3.6V 0°C ~ 70°C (TA) - - Surface Mount 90-TFBGA (8x13)
IS42S32400F-7BI

IS42S32400F-7BI

IC DRAM 128MBIT PAR 90TFBGA

ISSI, Integrated Silicon Solution Inc

0
IS42S32400F-7BI数据手册 - 90-TFBGA Tray Obsolete Not Verified Volatile DRAM SDRAM 128Mbit 4M x 32 Parallel 143 MHz - - 3V ~ 3.6V -40°C ~ 85°C (TA) - - Surface Mount 90-TFBGA (8x13)
IS43DR16160B-3DBI

IS43DR16160B-3DBI

IC DRAM 256MBIT PAR 84TWBGA

ISSI, Integrated Silicon Solution Inc

0
IS43DR16160B-3DBI数据手册 - 84-TFBGA Tray Obsolete Not Verified Volatile DRAM SDRAM - DDR2 256Mbit 16M x 16 Parallel 333 MHz 15ns 450 ps 1.7V ~ 1.9V -40°C ~ 85°C (TA) - - Surface Mount 84-TWBGA (8x12.5)
IS43DR16640B-25EBL

IS43DR16640B-25EBL

IC DRAM 1GBIT PARALLEL 84TWBGA

ISSI, Integrated Silicon Solution Inc

0
IS43DR16640B-25EBL数据手册 - 84-TFBGA Tray Active Not Verified Volatile DRAM SDRAM - DDR2 1Gbit 64M x 16 Parallel 400 MHz 15ns 450 ps 1.7V ~ 1.9V 0°C ~ 70°C (TA) - - Surface Mount 84-TWBGA (8x12.5)
IS43DR16640B-25EBLI

IS43DR16640B-25EBLI

IC DRAM 1GBIT PARALLEL 84TWBGA

ISSI, Integrated Silicon Solution Inc

0
IS43DR16640B-25EBLI数据手册 - 84-TFBGA Tray Active Not Verified Volatile DRAM SDRAM - DDR2 1Gbit 64M x 16 Parallel 400 MHz 15ns 450 ps 1.7V ~ 1.9V -40°C ~ 85°C (TA) - - Surface Mount 84-TWBGA (8x12.5)

分类概览

存储器 产品与选型指南

存储器 广泛应用于工业控制、汽车电子、通信设备、消费电子、新能源及其他电子系统。我们提供多品牌、多封装及不同规格的相关产品,方便工程师、采购人员和研发团队进行型号筛选、参数比较和采购询价。

您可以根据制造商、关键参数、库存情况及 Datasheet 信息筛选适合的 存储器。如暂时没有找到完全匹配的型号,也可以提交询价,我们将协助确认库存、交期以及可替代型号。

FAQ

如何选择合适的 存储器?

建议先确认电气参数、封装、工作温度、应用环境以及品牌要求,再结合库存和交期进行筛选。

页面上的库存信息是否可以直接采购?

库存会随供应情况变化。对于项目采购或批量需求,建议提交询价,以便进一步确认实时库存、价格和交期。

找不到指定型号怎么办?

您可以提交型号和数量需求,我们可以协助查询缺货型号,并根据参数提供可替代型号建议。

是否可以提供 Datasheet 和技术资料?

可以。产品列表中的 Datasheet 链接可用于查看相关技术资料;如资料暂缺,也可以联系我们协助查找。

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