单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

全部重置
全部应用
结果
图片 制造商料号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
CDBZ5T1045-HF

CDBZ5T1045-HF

DIODE SCHOTTKY 45V 10A SMC

Comchip Technology

263
CDBZ5T1045-HF数据手册 - Z5-T Tape & Reel (TR) Obsolete Schottky 45 V 10A 550 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 45 V - - - Surface Mount SMC (Z5-T) -55°C ~ 150°C
CDBJFSC5650-G

CDBJFSC5650-G

DIODE SIL CARBIDE 650V 5A TO220F

Comchip Technology

346
CDBJFSC5650-G数据手册 - TO-220-2 Full Pack Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 5A 1.7 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 430pF @ 0V, 1MHz - - Through Hole TO-220F -55°C ~ 175°C
CDBD2SC21200-G

CDBD2SC21200-G

DIODE SIL CARB 1.2KV 6.2A TO263

Comchip Technology

381
CDBD2SC21200-G数据手册 - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 6.2A 1.7 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 136pF @ 0V, 1MHz - - Surface Mount TO-263 (D2PAK) -55°C ~ 175°C
CDBDSC8650-G

CDBDSC8650-G

DIODE SIL CARB 650V 25.5A DPAK

Comchip Technology

342
CDBDSC8650-G数据手册 - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 25.5A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 550pF @ 0V, 1MHz - - Surface Mount DPAK -55°C ~ 175°C
CDBJFSC8650-G

CDBJFSC8650-G

DIODE SIL CARBIDE 650V 8A TO220F

Comchip Technology

479
CDBJFSC8650-G数据手册 - TO-220-2 Full Pack Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 560pF @ 0V, 1MHz - - Through Hole TO-220F -55°C ~ 175°C
CDBJSC10650-G

CDBJSC10650-G

DIODE SIL CARB 650V 10A TO220F

Comchip Technology

472
CDBJSC10650-G数据手册 - TO-220-2 Full Pack Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 710pF @ 0V, 1MHz - - Through Hole TO-220F -55°C ~ 175°C
CDBDSC10650-G

CDBDSC10650-G

DIODE SIL CARBIDE 650V 10A DPAK

Comchip Technology

355
CDBDSC10650-G数据手册 - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 690pF @ 0V, 1MHz - - Surface Mount DPAK -55°C ~ 175°C
CDBJFSC101200-G

CDBJFSC101200-G

DIODE SIL CARB 1.2KV 10A TO220F

Comchip Technology

553
CDBJFSC101200-G数据手册 - TO-220-2 Full Pack Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 780pF @ 0V, 1MHz - - Through Hole TO-220F -55°C ~ 175°C
CDBDSC51200-G

CDBDSC51200-G

DIODE SIL CARBIDE 1.2KV 18A DPAK

Comchip Technology

411
CDBDSC51200-G数据手册 - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 18A 1.7 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 475pF @ 0V, 1MHz - - Surface Mount DPAK -55°C ~ 175°C
CDBFR03100-HF

CDBFR03100-HF

DIODE SCHOTTKY 100V 300MA 1005

Comchip Technology

1,424
CDBFR03100-HF数据手册 - 1005 (2512 Metric) Tape & Reel (TR) Obsolete Schottky 100 V 300mA 820 mV @ 300 mA Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 100 V 25pF @ 1V, 1MHz - - Surface Mount 1005/SOD-323F -40°C ~ 150°C
Total 1669 Record«Prev1... 3435363738394041...167Next»
萬通电子有限公司

搜索

萬通电子有限公司

产品

萬通电子有限公司

电话

萬通电子有限公司

用户

萬通电子有限公司 萬通电子有限公司 萬通电子有限公司
WHATSAPP

+86 13760362468

萬通电子有限公司