单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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结果
图片 制造商料号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N4934G B0G

1N4934G B0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation

9,926
1N4934G B0G数据手册 - DO-204AL, DO-41, Axial Bulk Active Standard 100 V 1A 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 100 V 10pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
1N4936GHB0G

1N4936GHB0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

2,612
1N4936GHB0G数据手册 - DO-204AL, DO-41, Axial Bulk Active Standard 400 V 1A 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 400 V 10pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -55°C ~ 150°C
1N4937G B0G

1N4937G B0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

5,281
1N4937G B0G数据手册 - DO-204AL, DO-41, Axial Bulk Active Standard 600 V 1A 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 600 V 10pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
1N5397G B0G

1N5397G B0G

DIODE GEN PURP 600V 1.5A DO204AC

Taiwan Semiconductor Corporation

8,571
1N5397G B0G数据手册 - DO-204AC, DO-15, Axial Bulk Active Standard 600 V 1.5A 1 V @ 1.5 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 15pF @ 4V, 1MHz - - Through Hole DO-204AC (DO-15) -55°C ~ 150°C
1N5398GHB0G

1N5398GHB0G

DIODE GEN PURP 800V 1.5A DO204AC

Taiwan Semiconductor Corporation

9,011
1N5398GHB0G数据手册 - DO-204AC, DO-15, Axial Bulk Active Standard 800 V 1.5A 1 V @ 1.5 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 800 V 15pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-204AC (DO-15) -55°C ~ 150°C
1N5400GHB0G

1N5400GHB0G

DIODE GEN PURP 50V 3A DO201AD

Taiwan Semiconductor Corporation

9,342
1N5400GHB0G数据手册 - DO-201AD, Axial Bulk Active Standard 50 V 3A 1.1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 50 V 25pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-201AD -55°C ~ 150°C
1N5819 B0G

1N5819 B0G

DIODE SCHOTTKY 40V 1A DO204AL

Taiwan Semiconductor Corporation

9,680
1N5819 B0G数据手册 - DO-204AL, DO-41, Axial Bulk Active Schottky 40 V 1A 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 40 V 55pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -55°C ~ 125°C
1N5819HB0G

1N5819HB0G

DIODE SCHOTTKY 40V 1A DO204AL

Taiwan Semiconductor Corporation

2,371
1N5819HB0G数据手册 - DO-204AL, DO-41, Axial Bulk Active Schottky 40 V 1A 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 40 V 55pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -55°C ~ 125°C
1N5820 B0G

1N5820 B0G

DIODE SCHOTTKY 20V 3A DO201AD

Taiwan Semiconductor Corporation

4,819
1N5820 B0G数据手册 - DO-201AD, Axial Bulk Active Schottky 20 V 3A 475 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 20 V 200pF @ 4V, 1MHz - - Through Hole DO-201AD -55°C ~ 125°C
2A06G B0G

2A06G B0G

DIODE GEN PURP 800V 2A DO204AC

Taiwan Semiconductor Corporation

6,981
2A06G B0G数据手册 - DO-204AC, DO-15, Axial Bulk Active Standard 800 V 2A 1 V @ 2 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 800 V 15pF @ 4V, 1MHz - - Through Hole DO-204AC (DO-15) -55°C ~ 150°C
2A07G B0G

2A07G B0G

DIODE GEN PURP 2A DO204AC

Taiwan Semiconductor Corporation

2,450
2A07G B0G数据手册 - DO-204AC, DO-15, Axial Bulk Active Standard 1000 V 2A 1 V @ 2 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V 15pF @ 4V, 1MHz - - Through Hole DO-204AC (DO-15) -55°C ~ 150°C
31DF4 B0G

31DF4 B0G

DIODE GEN PURP 400V 3A DO201AD

Taiwan Semiconductor Corporation

5,306
31DF4 B0G数据手册 - DO-201AD, Axial Bulk Active Standard 400 V 3A 1.7 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 20 µA @ 400 V - - - Through Hole DO-201AD -40°C ~ 150°C
3A100 B0G

3A100 B0G

DIODE GEN PURP 3A DO204AC

Taiwan Semiconductor Corporation

9,182
3A100 B0G数据手册 - DO-204AC, DO-15, Axial Bulk Discontinued at Digi-Key Standard 1000 V 3A 1.1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V 27pF @ 4V, 1MHz - - Through Hole DO-204AC (DO-15) -55°C ~ 150°C
3A60 B0G

3A60 B0G

DIODE GEN PURP 600V 3A DO204AC

Taiwan Semiconductor Corporation

3,991
3A60 B0G数据手册 - DO-204AC, DO-15, Axial Bulk Discontinued at Digi-Key Standard 600 V 3A 1.1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 27pF @ 4V, 1MHz - - Through Hole DO-204AC (DO-15) -55°C ~ 150°C
6A100G B0G

6A100G B0G

DIODE GEN PURP 1KV 6A R-6

Taiwan Semiconductor Corporation

6,408
6A100G B0G数据手册 - R-6, Axial Bulk Active Standard 1000 V 6A 1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1000 V 60pF @ 4V, 1MHz - - Through Hole R-6 -55°C ~ 150°C
6A10G B0G

6A10G B0G

DIODE GEN PURP 100V 6A R-6

Taiwan Semiconductor Corporation

2,069
6A10G B0G数据手册 - R-6, Axial Bulk Discontinued at Digi-Key Standard 100 V 6A 1.1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 100 V 60pF @ 4V, 1MHz - - Through Hole R-6 -55°C ~ 150°C
6A10GHB0G

6A10GHB0G

DIODE GEN PURP 100V 6A R-6

Taiwan Semiconductor Corporation

5,123
6A10GHB0G数据手册 - R-6, Axial Bulk Active Standard 100 V 6A 1.1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 100 V 60pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole R-6 -55°C ~ 150°C
6A20G B0G

6A20G B0G

DIODE GEN PURP 200V 6A R-6

Taiwan Semiconductor Corporation

9,408
6A20G B0G数据手册 - R-6, Axial Bulk Discontinued at Digi-Key Standard 200 V 6A 1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 200 V 60pF @ 4V, 1MHz - - Through Hole R-6 -55°C ~ 150°C
6A40GHB0G

6A40GHB0G

DIODE GEN PURP 400V 6A R-6

Taiwan Semiconductor Corporation

5,672
6A40GHB0G数据手册 - R-6, Axial Bulk Discontinued at Digi-Key Standard 400 V 6A 1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 400 V 60pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole R-6 -55°C ~ 150°C
6A60G B0G

6A60G B0G

DIODE GEN PURP 600V 6A R-6

Taiwan Semiconductor Corporation

6,135
6A60G B0G数据手册 - R-6, Axial Bulk Discontinued at Digi-Key Standard 600 V 6A 1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V 60pF @ 4V, 1MHz - - Through Hole R-6 -55°C ~ 150°C

分类概览

单个二极管 产品与选型指南

单个二极管 广泛应用于工业控制、汽车电子、通信设备、消费电子、新能源及其他电子系统。我们提供多品牌、多封装及不同规格的相关产品,方便工程师、采购人员和研发团队进行型号筛选、参数比较和采购询价。

您可以根据制造商、关键参数、库存情况及 Datasheet 信息筛选适合的 单个二极管。如暂时没有找到完全匹配的型号,也可以提交询价,我们将协助确认库存、交期以及可替代型号。

FAQ

如何选择合适的 单个二极管?

建议先确认电气参数、封装、工作温度、应用环境以及品牌要求,再结合库存和交期进行筛选。

页面上的库存信息是否可以直接采购?

库存会随供应情况变化。对于项目采购或批量需求,建议提交询价,以便进一步确认实时库存、价格和交期。

找不到指定型号怎么办?

您可以提交型号和数量需求,我们可以协助查询缺货型号,并根据参数提供可替代型号建议。

是否可以提供 Datasheet 和技术资料?

可以。产品列表中的 Datasheet 链接可用于查看相关技术资料;如资料暂缺,也可以联系我们协助查找。

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