单个二极管
| 图片 | 制造商料号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UF1501S-BDIODE GEN PURP 50V 1.5A DO41 |
9,988 |
|
|
- | DO-204AL, DO-41, Axial | Bulk | Obsolete | Standard | 50 V | 1.5A | 1 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 50 V | 35pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
|
UF1502S-BDIODE GEN PURP 100V 1.5A DO41 |
9,259 |
|
|
- | DO-204AL, DO-41, Axial | Bulk | Obsolete | Standard | 100 V | 1.5A | 1 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 100 V | 35pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
|
UF1503S-BDIODE GEN PURP 200V 1.5A DO41 |
6,330 |
|
|
- | DO-204AL, DO-41, Axial | Bulk | Obsolete | Standard | 200 V | 1.5A | 1 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 200 V | 35pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
|
UF1504S-BDIODE GEN PURP 400V 1.5A DO41 |
9,876 |
|
|
- | DO-204AL, DO-41, Axial | Bulk | Obsolete | Standard | 400 V | 1.5A | 1.3 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 400 V | 35pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
|
UF1505S-BDIODE GEN PURP 600V 1.5A DO41 |
4,392 |
|
|
- | DO-204AL, DO-41, Axial | Bulk | Obsolete | Standard | 600 V | 1.5A | 1.7 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 600 V | 20pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
|
UF1506S-BDIODE GEN PURP 800V 1.5A DO41 |
6,330 |
|
|
- | DO-204AL, DO-41, Axial | Bulk | Obsolete | Standard | 800 V | 1.5A | 1.7 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 800 V | 20pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
|
|
NXPLQSC10650QDIODE SIL CARB 650V 10A TO220AC |
8,476 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.85 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 230 µA @ 650 V | 250pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
|
NXPSC04650QDIODE SIL CARB 650V 4A TO220AC |
5,389 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 170 µA @ 650 V | 130pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
|
NXPSC06650QDIODE SIL CARB 650V 6A TO220AC |
7,517 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 190pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
|
NXPSC08650QDIODE SIL CARB 650V 8A TO220AC |
3,421 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 230 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
IDH10G65C5ZXKSA2DIODE SCHOTTKY 650V 10A TO220-2 |
8,552 |
|
|
* | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IDH10G65C5ZXKSA1DIODE SIL CARB 650V 10A TO220-2 |
6,500 |
|
|
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2 | -55°C ~ 175°C |
|
IDT04S60CHKSA1DIODE SCHOTTKY 600V TO220-2 |
4,843 |
|
|
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IDT16S60CHKSA1DIODE SCHOTTKY 600V TO220-2 |
2,715 |
|
|
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RM1200E-TPDIODE GP 1.2KV 500MA DO214AC |
5,048 |
|
|
- | DO-214AC, SMA | Tape & Reel (TR) | Obsolete | Standard | 1200 V | 500mA | 2 V @ 500 mA | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1200 V | 30pF @ 4V, 1MHz | - | - | Surface Mount | DO-214AC (SMAE) | -55°C ~ 150°C |
|
RM1500E-TPDIODE GP 1.5KV 500MA DO214AC |
7,093 |
|
|
- | DO-214AC, SMA | Tape & Reel (TR) | Obsolete | Standard | 1500 V | 500mA | 2 V @ 500 mA | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1500 V | 30pF @ 4V, 1MHz | - | - | Surface Mount | DO-214AC (SMAE) | -55°C ~ 150°C |
|
RM1800E-TPDIODE GP 1.8KV 500MA DO214AC |
2,322 |
|
|
- | DO-214AC, SMA | Tape & Reel (TR) | Obsolete | Standard | 1800 V | 500mA | 2 V @ 500 mA | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1800 V | 30pF @ 4V, 1MHz | - | - | Surface Mount | DO-214AC (SMAE) | -55°C ~ 150°C |
|
RURD420S9A_TDIODE GEN PURP 200V 4A TO252AA |
4,332 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | Avalanche | 200 V | 4A | 1 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 100 µA @ 200 V | - | - | - | Surface Mount | TO-252AA | -65°C ~ 175°C |
|
CSICD10-1200 TR13DIODE SIL CARBIDE 1.2KV 10A DPAK |
4,696 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 1200 V | 500pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
|
1SS388(TL3,F,D)DIODE SCHOTTKY 45V 100MA ESC |
8,483 |
|
|
- | SC-79, SOD-523 | Tape & Reel (TR) | Obsolete | Schottky | 45 V | 100mA | 600 mV @ 50 mA | Small Signal =< 200mA (Io), Any Speed | - | 5 µA @ 10 V | 18pF @ 0V, 1MHz | - | - | Surface Mount | ESC | -40°C ~ 100°C |
分类概览
单个二极管 产品与选型指南
单个二极管 广泛应用于工业控制、汽车电子、通信设备、消费电子、新能源及其他电子系统。我们提供多品牌、多封装及不同规格的相关产品,方便工程师、采购人员和研发团队进行型号筛选、参数比较和采购询价。
您可以根据制造商、关键参数、库存情况及 Datasheet 信息筛选适合的 单个二极管。如暂时没有找到完全匹配的型号,也可以提交询价,我们将协助确认库存、交期以及可替代型号。
FAQ
如何选择合适的 单个二极管?
建议先确认电气参数、封装、工作温度、应用环境以及品牌要求,再结合库存和交期进行筛选。
页面上的库存信息是否可以直接采购?
库存会随供应情况变化。对于项目采购或批量需求,建议提交询价,以便进一步确认实时库存、价格和交期。
找不到指定型号怎么办?
您可以提交型号和数量需求,我们可以协助查询缺货型号,并根据参数提供可替代型号建议。
是否可以提供 Datasheet 和技术资料?
可以。产品列表中的 Datasheet 链接可用于查看相关技术资料;如资料暂缺,也可以联系我们协助查找。
