单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 制造商料号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
GB02SHT01-46

GB02SHT01-46

DIODE SIL CARBIDE 100V 4A TO46

GeneSiC Semiconductor

6,492
GB02SHT01-46数据手册 - TO-206AB, TO-46-3 Metal Can Bulk Obsolete SiC (Silicon Carbide) Schottky 100 V 4A 1.6 V @ 1 A No Recovery Time > 500mA (Io) 0 ns 5 µA @ 100 V 76pF @ 1V, 1MHz - - Through Hole TO-46 -55°C ~ 210°C
VS-1EFH01WHM3-18

VS-1EFH01WHM3-18

DIODE GEN PURP 100V 1A DO219AB

Vishay General Semiconductor - Diodes Division

3,717
VS-1EFH01WHM3-18数据手册 FRED Pt® DO-219AB Tape & Reel (TR) Obsolete Standard 100 V 1A 930 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 16 ns 2 µA @ 100 V - Automotive AEC-Q101 Surface Mount DO-219AB (SMF) -65°C ~ 175°C
VS-1EFH01W-M3-18

VS-1EFH01W-M3-18

DIODE GEN PURP 100V 1A DO219AB

Vishay General Semiconductor - Diodes Division

5,109
VS-1EFH01W-M3-18数据手册 FRED Pt® DO-219AB Tape & Reel (TR) Obsolete Standard 100 V 1A 930 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 16 ns 2 µA @ 100 V - - - Surface Mount DO-219AB (SMF) -65°C ~ 175°C
VS-1EFH02W-M3-18

VS-1EFH02W-M3-18

DIODE GEN PURP 200V 1A DO219AB

Vishay General Semiconductor - Diodes Division

4,394
VS-1EFH02W-M3-18数据手册 FRED Pt® DO-219AB Tape & Reel (TR) Obsolete Standard 200 V 1A 930 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 16 ns 2 µA @ 200 V - - - Surface Mount DO-219AB (SMF) -65°C ~ 175°C
BYC8B-600PQP

BYC8B-600PQP

DIODE GEN PURP 600V 8A D2PAK

NXP USA Inc.

4,645
BYC8B-600PQP数据手册 - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 8A 3.4 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 18 ns 20 µA @ 600 V - - - Surface Mount D2PAK 175°C (Max)
GP2D050A120B

GP2D050A120B

DIODE SIL CARB 1.2KV 50A TO247-2

SemiQ

8,045
GP2D050A120B数据手册 Amp+™ TO-247-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1200 V 50A 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 3174pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
C2D05120E-TR

C2D05120E-TR

DIODE SIL CARB 1.2KV 17.5A TO252

Wolfspeed, Inc.

8,288
C2D05120E-TR数据手册 Zero Recovery™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 1200 V 17.5A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 455pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
GP2D003A065A

GP2D003A065A

DIODE SIL CARB 650V 3A TO220-2

SemiQ

7,306
GP2D003A065A数据手册 Amp+™ TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 3A 1.65 V @ 3 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 158pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
GP2D005A120A

GP2D005A120A

DIODE SIL CARB 1.2KV 5A TO220-2

SemiQ

9,665
GP2D005A120A数据手册 Amp+™ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1200 V 5A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1200 V 317pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
GP2D005A120C

GP2D005A120C

DIODE SIL CARB 1.2KV 5A TO252-2L

SemiQ

8,410
GP2D005A120C数据手册 Amp+™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1200 V 5A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1200 V 317pF @ 1V, 1MHz - - Surface Mount TO-252-2L (DPAK) -55°C ~ 175°C
GP2D005A170B

GP2D005A170B

DIODE SIL CARB 1.7KV 5A TO247-2

SemiQ

3,053
GP2D005A170B数据手册 Amp+™ TO-247-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1700 V 5A 1.75 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1700 V 406pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GP2D006A065A

GP2D006A065A

DIODE SIL CARB 650V 6A TO220-2

SemiQ

4,038
GP2D006A065A数据手册 Amp+™ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 6A 1.65 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 316pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
GP2D006A065C

GP2D006A065C

DIODE SIL CARB 650V 6A TO252-2L

SemiQ

9,030
GP2D006A065C数据手册 Amp+™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 6A 1.65 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 316pF @ 1V, 1MHz - - Surface Mount TO-252-2L (DPAK) -55°C ~ 175°C
GP2D010A120A

GP2D010A120A

DIODE SIL CARB 1.2KV 10A TO220-2

SemiQ

7,035
GP2D010A120A数据手册 Amp+™ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1200 V 10A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 635pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
GP2D010A120B

GP2D010A120B

DIODE SIL CARB 1.2KV 10A TO247-2

SemiQ

6,089
GP2D010A120B数据手册 Amp+™ TO-247-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1200 V 10A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 635pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GP2D010A120C

GP2D010A120C

DIODE SIL CARB 1.2KV 10A TO252L

SemiQ

7,338
GP2D010A120C数据手册 Amp+™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1200 V 10A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 635pF @ 1V, 1MHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
GP2D010A170B

GP2D010A170B

DIODE SIL CARB 1.7KV 10A TO247-2

SemiQ

8,424
GP2D010A170B数据手册 Amp+™ TO-247-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1700 V 10A 1.75 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1700 V 812pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GP2D020A120B

GP2D020A120B

DIODE SIL CARB 1.2KV 20A TO247-2

SemiQ

2,108
GP2D020A120B数据手册 Amp+™ TO-247-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1200 V 20A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1200 V 1270pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GP2D020A170B

GP2D020A170B

DIODE SIL CARB 1.7KV 20A TO247-2

SemiQ

7,267
GP2D020A170B数据手册 Amp+™ TO-247-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1700 V 20A 1.75 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1700 V 1624pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GP2D030A120B

GP2D030A120B

DIODE SIL CARB 1.2KV 30A TO247-2

SemiQ

4,014
GP2D030A120B数据手册 Amp+™ TO-247-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1200 V 30A 1.8 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 1200 V 1905pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C

分类概览

单个二极管 产品与选型指南

单个二极管 广泛应用于工业控制、汽车电子、通信设备、消费电子、新能源及其他电子系统。我们提供多品牌、多封装及不同规格的相关产品,方便工程师、采购人员和研发团队进行型号筛选、参数比较和采购询价。

您可以根据制造商、关键参数、库存情况及 Datasheet 信息筛选适合的 单个二极管。如暂时没有找到完全匹配的型号,也可以提交询价,我们将协助确认库存、交期以及可替代型号。

FAQ

如何选择合适的 单个二极管?

建议先确认电气参数、封装、工作温度、应用环境以及品牌要求,再结合库存和交期进行筛选。

页面上的库存信息是否可以直接采购?

库存会随供应情况变化。对于项目采购或批量需求,建议提交询价,以便进一步确认实时库存、价格和交期。

找不到指定型号怎么办?

您可以提交型号和数量需求,我们可以协助查询缺货型号,并根据参数提供可替代型号建议。

是否可以提供 Datasheet 和技术资料?

可以。产品列表中的 Datasheet 链接可用于查看相关技术资料;如资料暂缺,也可以联系我们协助查找。

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