单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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结果
图片 制造商料号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
SB10-05A3-AT1

SB10-05A3-AT1

DIODE SCHOTTKY 50V 1A DO41

onsemi

5,897
SB10-05A3-AT1数据手册 - DO-204AL, DO-41, Axial Tape & Reel (TR) Obsolete Schottky 50 V 1A 580 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 mA @ 50 V - - - Through Hole DO-41 125°C (Max)
SB10-05A3-BT

SB10-05A3-BT

DIODE SCHOTTKY 50V 1A DO41

onsemi

9,599
SB10-05A3-BT数据手册 - DO-204AL, DO-41, Axial Tape & Reel (TR) Obsolete Schottky 50 V 1A 580 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 mA @ 50 V - - - Through Hole DO-41 125°C (Max)
SBE801-TL-H

SBE801-TL-H

DIODE SCHOTTKY 2A 30V CPH5

onsemi

4,303
SBE801-TL-H数据手册 * - Tape & Reel (TR) Obsolete - - - - - - - - - - - - -
C3D1P7060Q

C3D1P7060Q

DIODE SIL CARB 600V 9.7A 10QFN

Wolfspeed, Inc.

6,720
C3D1P7060Q数据手册 Z-Rec® 10-PowerTQFN Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 600 V 9.7A 1.7 V @ 1.7 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 100pF @ 0V, 1MHz - - Surface Mount 10-Power QFN (3.3x3.3) -55°C ~ 160°C
GPP100MS-E3/54

GPP100MS-E3/54

DIODE GEN PURP 1KV 10A P600

Vishay General Semiconductor - Diodes Division

2,691
GPP100MS-E3/54数据手册 - P600, Axial Tape & Reel (TR) Obsolete Standard 1000 V 10A 1.05 V @ 10 A Standard Recovery >500ns, > 200mA (Io) 5.5 µs 5 µA @ 1000 V 110pF @ 4V, 1MHz - - Through Hole P600 -55°C ~ 175°C
IDH10G65C5XKSA1

IDH10G65C5XKSA1

DIODE SIL CARB 650V 10A TO220-2

Infineon Technologies

7,297
IDH10G65C5XKSA1数据手册 CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 340 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDH05G65C5XKSA1

IDH05G65C5XKSA1

DIODE SIL CARB 650V 5A TO220-2-2

Infineon Technologies

2,413
IDH05G65C5XKSA1数据手册 CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 5A 1.7 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 170 µA @ 650 V 160pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDH08G65C5XKSA1

IDH08G65C5XKSA1

DIODE SIL CARB 650V 8A TO220-2-2

Infineon Technologies

4,174
IDH08G65C5XKSA1数据手册 CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 280 µA @ 650 V 250pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDW40G65C5FKSA1

IDW40G65C5FKSA1

DIODE SIL CARB 650V 40A TO247-3

Infineon Technologies

3,629
IDW40G65C5FKSA1数据手册 CoolSiC™+ TO-247-3 Bulk Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 40A 1.7 V @ 40 A No Recovery Time > 500mA (Io) 0 ns 1.4 mA @ 650 V 1140pF @ 1V, 1MHz - - Through Hole PG-TO247-3-1 -55°C ~ 175°C
IDH20G65C5XKSA1

IDH20G65C5XKSA1

DIODE SIL CARB 650V 20A TO220-2

Infineon Technologies

3,626
IDH20G65C5XKSA1数据手册 CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 700 µA @ 650 V 590pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDW10G65C5FKSA1

IDW10G65C5FKSA1

DIODE SIL CARB 650V 10A TO247-3

Infineon Technologies

5,244
IDW10G65C5FKSA1数据手册 CoolSiC™+ TO-247-3 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 400 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole PG-TO247-3-41 -55°C ~ 175°C
IDH03G65C5XKSA1

IDH03G65C5XKSA1

DIODE SIL CARB 650V 3A TO220-2-2

Infineon Technologies

5,340
IDH03G65C5XKSA1数据手册 CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 3A 1.7 V @ 3 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 100pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDH06G65C5XKSA1

IDH06G65C5XKSA1

DIODE SIL CARB 650V 6A TO220-2-2

Infineon Technologies

8,969
IDH06G65C5XKSA1数据手册 CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 210 µA @ 650 V 190pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDH04G65C5XKSA1

IDH04G65C5XKSA1

DIODE SIL CARB 650V 4A TO220-2-2

Infineon Technologies

2,826
IDH04G65C5XKSA1数据手册 CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 4A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 140 µA @ 650 V 130pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDW12G65C5FKSA1

IDW12G65C5FKSA1

DIODE SIL CARB 650V 12A TO247-3

Infineon Technologies

9,222
IDW12G65C5FKSA1数据手册 CoolSiC™+ TO-247-3 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 500 µA @ 650 V 360pF @ 1V, 1MHz - - Through Hole PG-TO247-3-41 -55°C ~ 175°C
IDW16G65C5FKSA1

IDW16G65C5FKSA1

DIODE SIL CARB 650V 16A TO247-3

Infineon Technologies

3,635
IDW16G65C5FKSA1数据手册 CoolSiC™+ TO-247-3 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 16A 1.7 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 600 µA @ 650 V 470pF @ 1V, 1MHz - - Through Hole PG-TO247-3-1 -55°C ~ 175°C
IDW20G65C5FKSA1

IDW20G65C5FKSA1

DIODE SIL CARB 650V 20A TO247-3

Infineon Technologies

4,510
IDW20G65C5FKSA1数据手册 CoolSiC™+ TO-247-3 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 700 µA @ 650 V 590pF @ 1V, 1MHz - - Through Hole PG-TO247-3-1 -55°C ~ 175°C
IDH09G65C5XKSA1

IDH09G65C5XKSA1

DIODE SIL CARB 650V 9A TO220-2-2

Infineon Technologies

9,643
IDH09G65C5XKSA1数据手册 CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 9A 1.7 V @ 9 A No Recovery Time > 500mA (Io) 0 ns 310 µA @ 650 V 270pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDH16G65C5XKSA1

IDH16G65C5XKSA1

DIODE SIL CARB 650V 16A TO220-2

Infineon Technologies

8,688
IDH16G65C5XKSA1数据手册 CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 16A 1.7 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 550 µA @ 650 V 470pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
CD1206-S01575

CD1206-S01575

DIODE GEN PURP 100V 150MA 1206

Bourns Inc.

4,511
CD1206-S01575数据手册 - 1206 (3216 Metric) Tape & Reel (TR) Obsolete Standard 100 V 150mA 1 V @ 50 mA Small Signal =< 200mA (Io), Any Speed 4 ns 2.5 µA @ 100 V 3pF @ 0V, 100MHz - - Surface Mount 1206 -55°C ~ 125°C

分类概览

单个二极管 产品与选型指南

单个二极管 广泛应用于工业控制、汽车电子、通信设备、消费电子、新能源及其他电子系统。我们提供多品牌、多封装及不同规格的相关产品,方便工程师、采购人员和研发团队进行型号筛选、参数比较和采购询价。

您可以根据制造商、关键参数、库存情况及 Datasheet 信息筛选适合的 单个二极管。如暂时没有找到完全匹配的型号,也可以提交询价,我们将协助确认库存、交期以及可替代型号。

FAQ

如何选择合适的 单个二极管?

建议先确认电气参数、封装、工作温度、应用环境以及品牌要求,再结合库存和交期进行筛选。

页面上的库存信息是否可以直接采购?

库存会随供应情况变化。对于项目采购或批量需求,建议提交询价,以便进一步确认实时库存、价格和交期。

找不到指定型号怎么办?

您可以提交型号和数量需求,我们可以协助查询缺货型号,并根据参数提供可替代型号建议。

是否可以提供 Datasheet 和技术资料?

可以。产品列表中的 Datasheet 链接可用于查看相关技术资料;如资料暂缺,也可以联系我们协助查找。

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