单个二极管
| 图片 | 制造商料号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDD05SG60CXTMA1DIODE SIL CARB 600V 5A TO252-3 |
6,204 |
|
|
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 5A | 2.3 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 600 V | 110pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |
|
IDD06SG60CXTMA1DIODE SIL CARB 600V 6A TO252-3 |
7,200 |
|
|
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 6A | 2.3 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 600 V | 130pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |
|
IDD08SG60CXTMA1DIODE SIL CARB 600V 8A TO252-3 |
7,387 |
|
|
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 8A | 2.1 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 600 V | 240pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |
|
IDD09SG60CXTMA1DIODE SIL CARB 600V 9A TO252-3 |
5,336 |
|
|
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 9A | 2.1 V @ 9 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 600 V | 280pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |
|
IDD10SG60CXTMA1DIODE SIL CARB 600V 10A TO252-3 |
2,520 |
|
|
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 10A | 2.1 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 600 V | 290pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |
|
IDD12SG60CXTMA1DIODE SIL CARB 600V 12A TO252-3 |
2,593 |
|
|
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 12A | 2.1 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 600 V | 310pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |
|
IDH02SG120XKSA1DIODE SIL CARB 1.2KV 2A TO220-2 |
3,403 |
|
|
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 2A | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 48 µA @ 1200 V | 125pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
IDH03SG60CXKSA1DIODE SIL CARB 600V 3A TO220-2 |
7,237 |
|
|
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 3A | 2.3 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 600 V | 60pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
IDH04SG60CXKSA1DIODE SIL CARB 600V 4A TO220-2-2 |
7,979 |
|
|
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 4A | 2.3 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 600 V | 80pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
IDH05S120AKSA1DIODE SIL CARB 1200V 5A TO220-2 |
8,182 |
|
|
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 1200 V | 250pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
IDH06SG60CXKSA1DIODE SIL CARB 600V 6A TO220-2-2 |
6,974 |
|
|
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 6A | 2.3 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 600 V | 130pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
IDH08S120AKSA1DIODE SIC 1.2KV 7.5A TO220 |
8,325 |
|
|
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 7.5A | 1.8 V @ 7.5 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 1200 V | 380pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
IDH08SG60CXKSA1DIODE SIL CARB 600V 8A TO220-2-2 |
2,703 |
|
|
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 8A | 2.1 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 600 V | 240pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
IDH09SG60CXKSA1DIODE SIL CARB 600V 9A TO220-2-2 |
2,540 |
|
|
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 9A | 2.1 V @ 9 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 600 V | 280pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
IDH10SG60CXKSA1DIODE SIL CARB 600V 10A TO220-2 |
2,590 |
|
|
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 10A | 2.1 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 600 V | 290pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
IDH12SG60CXKSA1DIODE SIL CARB 600V 12A TO220-2 |
3,333 |
|
|
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 12A | 2.1 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 600 V | 310pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
MA21D380GLDIODE SCHOTTKY 30V 1A SMINI2-F2 |
6,897 |
|
|
- | 2-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | Schottky | 30 V | 1A | 420 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 13 ns | 100 µA @ 30 V | 40pF @ 10V, 1MHz | - | - | Surface Mount | SMini2-F2 | 125°C (Max) |
|
FFD20UP20SDIODE GEN PURP 200V 20A TO252AA |
6,484 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | Standard | 200 V | 20A | 1.15 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 100 µA @ 200 V | - | - | - | Surface Mount | TO-252AA | -65°C ~ 150°C |
|
FFP08D60L2DIODE GEN PURP 600V 8A TO220-2 |
9,732 |
|
|
- | TO-220-2 | Tube | Obsolete | Standard | 600 V | 8A | 3.6 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-220-2 | -65°C ~ 150°C |
|
DPF120X200NADIODE GEN PURP 200V 120A SOT227B |
3,206 |
|
|
- | SOT-227-4, miniBLOC | Tube | Active | Standard | 200 V | 120A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | - | - | Chassis Mount | SOT-227B | - |
分类概览
单个二极管 产品与选型指南
单个二极管 广泛应用于工业控制、汽车电子、通信设备、消费电子、新能源及其他电子系统。我们提供多品牌、多封装及不同规格的相关产品,方便工程师、采购人员和研发团队进行型号筛选、参数比较和采购询价。
您可以根据制造商、关键参数、库存情况及 Datasheet 信息筛选适合的 单个二极管。如暂时没有找到完全匹配的型号,也可以提交询价,我们将协助确认库存、交期以及可替代型号。
FAQ
如何选择合适的 单个二极管?
建议先确认电气参数、封装、工作温度、应用环境以及品牌要求,再结合库存和交期进行筛选。
页面上的库存信息是否可以直接采购?
库存会随供应情况变化。对于项目采购或批量需求,建议提交询价,以便进一步确认实时库存、价格和交期。
找不到指定型号怎么办?
您可以提交型号和数量需求,我们可以协助查询缺货型号,并根据参数提供可替代型号建议。
是否可以提供 Datasheet 和技术资料?
可以。产品列表中的 Datasheet 链接可用于查看相关技术资料;如资料暂缺,也可以联系我们协助查找。
