单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

全部重置
全部应用
结果
图片 制造商料号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
IDD05SG60CXTMA1

IDD05SG60CXTMA1

DIODE SIL CARB 600V 5A TO252-3

Infineon Technologies

6,204
IDD05SG60CXTMA1数据手册 CoolSiC™+ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 600 V 5A 2.3 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 600 V 110pF @ 1V, 1MHz - - Surface Mount PG-TO252-3 -55°C ~ 175°C
IDD06SG60CXTMA1

IDD06SG60CXTMA1

DIODE SIL CARB 600V 6A TO252-3

Infineon Technologies

7,200
IDD06SG60CXTMA1数据手册 CoolSiC™+ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 600 V 6A 2.3 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 130pF @ 1V, 1MHz - - Surface Mount PG-TO252-3 -55°C ~ 175°C
IDD08SG60CXTMA1

IDD08SG60CXTMA1

DIODE SIL CARB 600V 8A TO252-3

Infineon Technologies

7,387
IDD08SG60CXTMA1数据手册 CoolSiC™+ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 600 V 8A 2.1 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 600 V 240pF @ 1V, 1MHz - - Surface Mount PG-TO252-3 -55°C ~ 175°C
IDD09SG60CXTMA1

IDD09SG60CXTMA1

DIODE SIL CARB 600V 9A TO252-3

Infineon Technologies

5,336
IDD09SG60CXTMA1数据手册 CoolSiC™+ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 600 V 9A 2.1 V @ 9 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 600 V 280pF @ 1V, 1MHz - - Surface Mount PG-TO252-3 -55°C ~ 175°C
IDD10SG60CXTMA1

IDD10SG60CXTMA1

DIODE SIL CARB 600V 10A TO252-3

Infineon Technologies

2,520
IDD10SG60CXTMA1数据手册 CoolSiC™+ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 600 V 10A 2.1 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 600 V 290pF @ 1V, 1MHz - - Surface Mount PG-TO252-3 -55°C ~ 175°C
IDD12SG60CXTMA1

IDD12SG60CXTMA1

DIODE SIL CARB 600V 12A TO252-3

Infineon Technologies

2,593
IDD12SG60CXTMA1数据手册 CoolSiC™+ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 600 V 12A 2.1 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 600 V 310pF @ 1V, 1MHz - - Surface Mount PG-TO252-3 -55°C ~ 175°C
IDH02SG120XKSA1

IDH02SG120XKSA1

DIODE SIL CARB 1.2KV 2A TO220-2

Infineon Technologies

3,403
IDH02SG120XKSA1数据手册 CoolSiC™+ TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 2A 1.8 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 48 µA @ 1200 V 125pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDH03SG60CXKSA1

IDH03SG60CXKSA1

DIODE SIL CARB 600V 3A TO220-2

Infineon Technologies

7,237
IDH03SG60CXKSA1数据手册 CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 600 V 3A 2.3 V @ 3 A No Recovery Time > 500mA (Io) 0 ns 15 µA @ 600 V 60pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDH04SG60CXKSA1

IDH04SG60CXKSA1

DIODE SIL CARB 600V 4A TO220-2-2

Infineon Technologies

7,979
IDH04SG60CXKSA1数据手册 CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 600 V 4A 2.3 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 25 µA @ 600 V 80pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDH05S120AKSA1

IDH05S120AKSA1

DIODE SIL CARB 1200V 5A TO220-2

Infineon Technologies

8,182
IDH05S120AKSA1数据手册 CoolSiC™+ TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 5A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 1200 V 250pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDH06SG60CXKSA1

IDH06SG60CXKSA1

DIODE SIL CARB 600V 6A TO220-2-2

Infineon Technologies

6,974
IDH06SG60CXKSA1数据手册 CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 600 V 6A 2.3 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 130pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDH08S120AKSA1

IDH08S120AKSA1

DIODE SIC 1.2KV 7.5A TO220

Infineon Technologies

8,325
IDH08S120AKSA1数据手册 CoolSiC™+ TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 7.5A 1.8 V @ 7.5 A No Recovery Time > 500mA (Io) 0 ns 180 µA @ 1200 V 380pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDH08SG60CXKSA1

IDH08SG60CXKSA1

DIODE SIL CARB 600V 8A TO220-2-2

Infineon Technologies

2,703
IDH08SG60CXKSA1数据手册 CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 600 V 8A 2.1 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 600 V 240pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDH09SG60CXKSA1

IDH09SG60CXKSA1

DIODE SIL CARB 600V 9A TO220-2-2

Infineon Technologies

2,540
IDH09SG60CXKSA1数据手册 CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 600 V 9A 2.1 V @ 9 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 600 V 280pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDH10SG60CXKSA1

IDH10SG60CXKSA1

DIODE SIL CARB 600V 10A TO220-2

Infineon Technologies

2,590
IDH10SG60CXKSA1数据手册 CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 600 V 10A 2.1 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 600 V 290pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDH12SG60CXKSA1

IDH12SG60CXKSA1

DIODE SIL CARB 600V 12A TO220-2

Infineon Technologies

3,333
IDH12SG60CXKSA1数据手册 CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 600 V 12A 2.1 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 600 V 310pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
MA21D380GL

MA21D380GL

DIODE SCHOTTKY 30V 1A SMINI2-F2

Panasonic Electronic Components

6,897
MA21D380GL数据手册 - 2-SMD, Flat Leads Tape & Reel (TR) Obsolete Schottky 30 V 1A 420 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 13 ns 100 µA @ 30 V 40pF @ 10V, 1MHz - - Surface Mount SMini2-F2 125°C (Max)
FFD20UP20S

FFD20UP20S

DIODE GEN PURP 200V 20A TO252AA

onsemi

6,484
FFD20UP20S数据手册 - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete Standard 200 V 20A 1.15 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 100 µA @ 200 V - - - Surface Mount TO-252AA -65°C ~ 150°C
FFP08D60L2

FFP08D60L2

DIODE GEN PURP 600V 8A TO220-2

onsemi

9,732
FFP08D60L2数据手册 - TO-220-2 Tube Obsolete Standard 600 V 8A 3.6 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 10 µA @ 600 V - - - Through Hole TO-220-2 -65°C ~ 150°C
DPF120X200NA

DPF120X200NA

DIODE GEN PURP 200V 120A SOT227B

IXYS

3,206
DPF120X200NA数据手册 - SOT-227-4, miniBLOC Tube Active Standard 200 V 120A - Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis Mount SOT-227B -

分类概览

单个二极管 产品与选型指南

单个二极管 广泛应用于工业控制、汽车电子、通信设备、消费电子、新能源及其他电子系统。我们提供多品牌、多封装及不同规格的相关产品,方便工程师、采购人员和研发团队进行型号筛选、参数比较和采购询价。

您可以根据制造商、关键参数、库存情况及 Datasheet 信息筛选适合的 单个二极管。如暂时没有找到完全匹配的型号,也可以提交询价,我们将协助确认库存、交期以及可替代型号。

FAQ

如何选择合适的 单个二极管?

建议先确认电气参数、封装、工作温度、应用环境以及品牌要求,再结合库存和交期进行筛选。

页面上的库存信息是否可以直接采购?

库存会随供应情况变化。对于项目采购或批量需求,建议提交询价,以便进一步确认实时库存、价格和交期。

找不到指定型号怎么办?

您可以提交型号和数量需求,我们可以协助查询缺货型号,并根据参数提供可替代型号建议。

是否可以提供 Datasheet 和技术资料?

可以。产品列表中的 Datasheet 链接可用于查看相关技术资料;如资料暂缺,也可以联系我们协助查找。

萬通电子有限公司

搜索

萬通电子有限公司

产品

萬通电子有限公司

电话

萬通电子有限公司

用户

萬通电子有限公司 萬通电子有限公司 萬通电子有限公司
WHATSAPP

+86 13760362468

萬通电子有限公司