单个二极管
| 图片 | 制造商料号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDH12S60CAKSA1DIODE SIL CARB 600V 12A TO220-2 |
8,966 |
|
|
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 160 µA @ 600 V | 530pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
IDH16S60CAKSA1DIODE SIL CARB 600V 16A TO220-2 |
3,535 |
|
|
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 650pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
MMBD914LT3HTMA1DIODE GEN PURP 100V 250MA SOT23 |
4,777 |
|
|
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | Standard | 100 V | 250mA | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 75 V | 2pF @ 0V, 1MHz | - | - | Surface Mount | PG-SOT23 | 150°C (Max) |
|
SDB06S60DIODE SIL CARB 600V 6A TO263 |
3,281 |
|
|
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 300pF @ 0V, 1MHz | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
|
SDP10S30DIODE SIL CARB 300V 10A TO220-3 |
8,076 |
|
|
CoolSiC™+ | TO-220-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 300 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 300 V | 600pF @ 0V, 1MHz | - | - | Through Hole | PG-TO220-3 | -55°C ~ 175°C |
|
SDT10S60DIODE SIL CARB 600V 10A TO220-2 |
4,537 |
|
|
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 350 µA @ 600 V | 350pF @ 0V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
SIDC03D60F6X1SA2DIODE GP 600V 6A WAFER |
4,457 |
|
|
- | Die | Bulk | Obsolete | Standard | 600 V | 6A | 1.6 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 150°C |
|
SIDC04D60F6X1SA3DIODE GP 600V 9A WAFER |
6,676 |
|
|
- | Die | Bulk | Obsolete | Standard | 600 V | 9A | 1.6 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 150°C |
|
SIDC06D60E6X1SA3DIODE GP 600V 10A WAFER |
2,009 |
|
|
- | Die | Bulk | Obsolete | Standard | 600 V | 10A | 1.25 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
|
SIDC06D60F6X1SA3DIODE GP 600V 15A WAFER |
4,017 |
|
|
- | Die | Bulk | Obsolete | Standard | 600 V | 15A | 1.6 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 150°C |
|
SIDC07D60E6X1SA1DIODE GP 600V 15A WAFER |
4,060 |
|
|
- | Die | Bulk | Obsolete | Standard | 600 V | 15A | 1.25 V @ 15 A | Standard Recovery >500ns, > 200mA (Io) | - | 250 µA @ 600 V | - | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
|
SIDC07D60F6X1SA2DIODE GP 600V 22.5A WAFER |
6,249 |
|
|
- | Die | Bulk | Obsolete | Standard | 600 V | 22.5A | 1.6 V @ 22.5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 150°C |
|
SIDC09D60E6X1SA1DIODE GP 600V 20A WAFER |
9,064 |
|
|
- | Die | Bulk | Obsolete | Standard | 600 V | 20A | 1.7 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 27 µA @ 600 V | - | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
|
SIDC09D60F6X1SA2DIODE GP 600V 30A WAFER |
8,573 |
|
|
- | Die | Bulk | Obsolete | Standard | 600 V | 30A | 1.6 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
|
SIDC14D120E6X1SA4DIODE GP 1.2KV 15A WAFER |
5,673 |
|
|
- | Die | Bulk | Discontinued at Digi-Key | Standard | 1200 V | 15A | 1.9 V @ 15 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
|
SIDC14D60E6X1SA1DIODE GP 600V 30A WAFER |
8,648 |
|
|
- | Die | Bulk | Obsolete | Standard | 600 V | 30A | 1.25 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
|
SIDC14D60F6X1SA2DIODE GP 600V 45A WAFER |
8,220 |
|
|
- | Die | Bulk | Obsolete | Standard | 600 V | 45A | 1.6 V @ 45 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 150°C |
|
SIDC23D60E6X1SA4DIODE GP 600V 50A WAFER |
5,159 |
|
|
- | Die | Bulk | Obsolete | Standard | 600 V | 50A | 1.25 V @ 50 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
|
SIDC42D60E6X1SA1DIODE GP 600V 100A WAFER |
7,132 |
|
|
- | Die | Bulk | Obsolete | Standard | 600 V | 100A | 1.25 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
|
SIDC56D60E6X1SA1DIODE GP 600V 150A WAFER |
2,187 |
|
|
- | Die | Bulk | Obsolete | Standard | 600 V | 150A | 1.25 V @ 150 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
分类概览
单个二极管 产品与选型指南
单个二极管 广泛应用于工业控制、汽车电子、通信设备、消费电子、新能源及其他电子系统。我们提供多品牌、多封装及不同规格的相关产品,方便工程师、采购人员和研发团队进行型号筛选、参数比较和采购询价。
您可以根据制造商、关键参数、库存情况及 Datasheet 信息筛选适合的 单个二极管。如暂时没有找到完全匹配的型号,也可以提交询价,我们将协助确认库存、交期以及可替代型号。
FAQ
如何选择合适的 单个二极管?
建议先确认电气参数、封装、工作温度、应用环境以及品牌要求,再结合库存和交期进行筛选。
页面上的库存信息是否可以直接采购?
库存会随供应情况变化。对于项目采购或批量需求,建议提交询价,以便进一步确认实时库存、价格和交期。
找不到指定型号怎么办?
您可以提交型号和数量需求,我们可以协助查询缺货型号,并根据参数提供可替代型号建议。
是否可以提供 Datasheet 和技术资料?
可以。产品列表中的 Datasheet 链接可用于查看相关技术资料;如资料暂缺,也可以联系我们协助查找。
