单个二极管
| 图片 | 制造商料号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UTR62DIODE GEN PURP 600V 2A A AXIAL |
2,118 |
|
|
- | A, Axial | Bulk | Active | Standard | 600 V | 2A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 3 µA @ 600 V | 40pF @ 0V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
JANTX1N5419DIODE GEN PURP 500V 3A AXIAL |
9,180 |
|
|
- | B, Axial | Bulk | Active | Standard | 500 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 500 V | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
LSIC2SD120D10DIODE SIL CARB 1.2KV 28A TO263L |
5,546 |
|
|
Gen2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 28A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 582pF @ 1V, 1MHz | - | - | Surface Mount | TO-263-2L | -55°C ~ 175°C |
|
JAN1N5420/TRDIODE GEN PURP 600V 3A B AXIAL |
6,191 |
|
|
- | B, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 1 µA @ 600 V | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
WBST080SCM120CGALWWBST080SCM120CGAL/NAU000/NO MARK |
4,318 |
|
|
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
LSIC2SD065C16ADIODE SIL CARB 650V 38A TO252 |
9,017 |
|
|
Gen2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 38A | 1.8 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 730pF @ 1V, 1MHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
80EPF12DIODE GEN PURP 1.2KV 80A TO247AC |
6,130 |
|
|
- | TO-247-3 | Tube | Obsolete | Standard | 1200 V | 80A | 1.35 V @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | 480 ns | 100 µA @ 1200 V | - | - | - | Through Hole | TO-247AC | -65°C ~ 175°C |
|
JANTXV1N5417/TRDIODE GEN PURP 200V 3A |
9,598 |
|
|
- | B, Axial | Tape & Reel (TR) | Active | Standard | 200 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
121NQ040DIODE SCHOTTKY 40V 120A D-67 |
3,604 |
|
|
- | D-67 HALF-PAK | Bulk | Obsolete | Schottky | 40 V | 120A | 650 mV @ 120 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 mA @ 40 V | 5200pF @ 5V, 1MHz | - | - | Chassis Mount | D-67 HALF-PAK | - |
|
AIDW40S65C5XKSA1DIODE SIL CARB 650V 40A TO247-3 |
3,227 |
|
|
CoolSiC™ | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 40A | 1.7 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 1138pF @ 1V, 1MHz | Automotive | AEC-Q100/101 | Through Hole | PG-TO247-3-41 | -40°C ~ 175°C |
|
CDLL5819E3/TRDIODE SCHOTTKY 45V 1A DO213AB |
3,322 |
|
|
- | DO-213AB, MELF (Glass) | Tape & Reel (TR) | Active | Schottky | 45 V | 1A | 490 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | 70pF @ 5V, 1MHz | - | - | Surface Mount | DO-213AB | -65°C ~ 125°C |
|
JANTX1N5419/TRDIODE GEN PURP 500V 3A |
4,929 |
|
|
- | B, Axial | Tape & Reel (TR) | Active | Standard | 500 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 500 V | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
UT252DIODE GEN PURP 200V 1A A AXIAL |
4,679 |
|
|
- | A, Axial | Bulk | Active | Standard | 200 V | 1A | 1 V @ 750 mA | Standard Recovery >500ns, > 200mA (Io) | - | 2 µA @ 200 V | - | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
JAN1N5417USDIODE GEN PURP 200V 3A B SQ-MELF |
6,610 |
|
|
- | SQ-MELF, B | Bulk | Active | Standard | 200 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | Military | MIL-PRF-19500/411 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
JANTXV1N4248/TRDIODE GEN PURP 800V 1A |
9,011 |
|
|
- | A, Axial | Tape & Reel (TR) | Active | Standard | 800 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 800 V | - | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
|
GB10SLT12-220DIODE SIL CARB 1.2KV 10A TO220-2 |
7,227 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1200 V | 520pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
CN5179 BK TIN/LEADDIODE GEN PURP 20V DO35 |
7,101 |
|
|
- | DO-204AH, DO-35, Axial | Box | Obsolete | Standard | 20 V | - | 3.7 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 10 µA @ 20 V | - | - | - | Through Hole | DO-35 | -65°C ~ 150°C |
|
JANTX1N5614USDIODE GEN PURP 200V 1A D-5A |
3,826 |
|
|
- | SQ-MELF, A | Bulk | Active | Standard | 200 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 200 V | - | Military | MIL-PRF-19500/437 | Surface Mount | D-5A | -65°C ~ 200°C |
|
SIC20120B-BPInterface |
3,825 |
|
|
- | TO-220-2 | Bulk | Last Time Buy | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | - | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
VS-86HF80DIODE GEN PURP 800V 85A DO203AB |
5,650 |
|
|
- | DO-203AB, DO-5, Stud | Bulk | Active | Standard | 800 V | 85A | 1.2 V @ 267 A | Standard Recovery >500ns, > 200mA (Io) | - | 9 mA @ 800 V | - | - | - | Chassis, Stud Mount | DO-203AB (DO-5) | -65°C ~ 180°C |
分类概览
单个二极管 产品与选型指南
单个二极管 广泛应用于工业控制、汽车电子、通信设备、消费电子、新能源及其他电子系统。我们提供多品牌、多封装及不同规格的相关产品,方便工程师、采购人员和研发团队进行型号筛选、参数比较和采购询价。
您可以根据制造商、关键参数、库存情况及 Datasheet 信息筛选适合的 单个二极管。如暂时没有找到完全匹配的型号,也可以提交询价,我们将协助确认库存、交期以及可替代型号。
FAQ
如何选择合适的 单个二极管?
建议先确认电气参数、封装、工作温度、应用环境以及品牌要求,再结合库存和交期进行筛选。
页面上的库存信息是否可以直接采购?
库存会随供应情况变化。对于项目采购或批量需求,建议提交询价,以便进一步确认实时库存、价格和交期。
找不到指定型号怎么办?
您可以提交型号和数量需求,我们可以协助查询缺货型号,并根据参数提供可替代型号建议。
是否可以提供 Datasheet 和技术资料?
可以。产品列表中的 Datasheet 链接可用于查看相关技术资料;如资料暂缺,也可以联系我们协助查找。
